| 摘要 |
PURPOSE:To increase the resistance of a-Si, to suppress the degradation in contrast ratio by leakage between source and drain and between drain and drain and to prevent the crosstalk by providing the region corresponding with gate wiring with light shielding film. CONSTITUTION:Parasitic TFTs(thin-film transistors) in which gate wirings 19 to 21 are formed as gates and display electrodes 15 and the drain lines are connected 16 via the s-Si(amorphous silicon), are formed on the light shielding films 11 across interlayer inculating films. Since the incidence of light is prohibited by these light shielding films 11, the a-Si is maintained at the high resistance and the leakage by the off currents of the parasitic TFTs is suppressed and the sources and the drains are insulated from each other. Since the a-Si of the similar parasitic TFTs generated between the drain lines 16 has the high resistance, the leakage between the drains is suppressed and the crosstalk is prevented. |
