| 摘要 |
PURPOSE:To reduce the cell area, i.e., increase the integration degree and speed up the signal processing. CONSTITUTION:A p-type impurity diffused layer 4a of a p-type transistor and n-type impurity diffused layer 4b of an n-type transistor which are components of an SRAM cell are formed in a semiconductor film layer of the same pattern so as to form a direct p-n junction (diode connection). Parts of gate electrodes 6a and 6a' formed on the upper part of the semiconductor film layer are connected through contact holes 8a and 8b to the impurity diffused layer 4b or/and 4a near the p-n junction. |
