| 摘要 |
PURPOSE:To form line contact holes exceeding the resolution of photolithography technique, and realize sufficient insulation between a lower wiring layer and an upper wiring layer. CONSTITUTION:A first conductor layer, an insulating film 18, and a second conductor layer are formed in order on an interlayer insulating film, and the first conductor layer is selectively etched and eliminated by using an anisotropic dry etching method. An ozone TEOS.NSC film is grown on the whole surface by using a CVD method. The film is thickly formed on the upper part of the first conductor layer and on the side wall, and is thinly formed on the insulating film 18. The insulating film on the second conductor film 19, and the NSG film are etched and eliminated, and a side wall is formed. The first and second conducting films 17, 19 are used as masks, and a fine contact hole is formed by anisotropic dry etching. Thereby the interlayer insulating film thickness can be stably ensured, and the enlargement of contact hole size due to anisotropic dry etching is not generated, so that insulation between different potentials can be stably ensured. |
