| 摘要 |
<p>Auto-encapsulated power semiconductor device, with improved thermal transfer. It comprises a chip (6) which carries at least one power transistor having at least one interdigital electrode, provided with a "to air" metal bridge (8), and a dissipator (9) provided with at least one metal land (23) in relief. The "to air" bridge (8) is reinforced, and the chip (6) is brazed on the reverse to the land (23) of the dissipator, by its "to air" bridge (8). Other lands (24), brazed on metallisations (17) surrounding the chip (6), reinforce the mechanical fixing. The pathways to the electrodes are made through metallised holes (11, 12, 13), and the second face (10) of the substrate can receive non-integrable components. Application to transistors and integrated power circuits, in particular on GaAs. <IMAGE></p> |
