Prodn. of semiconductor device

摘要

Prodn. of a semiconductor device comprises: (a) coating a lower layer (14) with an anti-reflecting film (15); (b) coating the film (15) with a 1st photo-lacquer film (13) and irradiating using a mask (12) and developing, where a 1st photolacquer structure (13B) is produced; (c) etching an irradiated region of the film (15), where an anti-reflecting film structure (15A) is produced; (d) removing the 1st photo-lacquer structure and irradiating the whole exposed surface of the resulting structure, obtd. after removing the 1st photo-lacquer structure, with a 2nd photo-lacquer film (19); (e) irradiating the 2nd photo-lacquer film (19) using a mask (12) and developing, where a 2nd photo-lacquer structure (19A) is produced; and (f) etching the irradiated region of the anti-reflecting film structure and subsequently etching the lower layer to produce a lower layer structure.