发明名称 METAL WIRE STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 The method forms a lower wiring film and a strap pattern in the contact hole of a semiconductor device. The method has the steps of laminating a strap pattern and a lower wiring film on the substrate, forming an oxide insulating film, forming the contact holes with a lower wiring film through the oxide film, and attaching the upper and the lower wiring films. The strap pattern prevents the damage of wires from excessive etching.
申请公布号 KR950006342(B1) 申请公布日期 1995.06.14
申请号 KR19920000104 申请日期 1992.01.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, SU - KIL
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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