发明名称 |
Internal resistance reducing circuit for MOSFET half-bridge driver |
摘要 |
The circuit reduces the internal resistance of inverting, complementary MOSFET half-bridge drivers on missing supply voltage. To the n-channel MOS transistor (T2) of the half-bridge driver is parallel-connected a pnp-transistor (T3), with the n-channel MOS transistor being of lower power. The connection is such that the pnp-transistor emitter is linked to the drain terminal (D), and its collector is coupled to the source terminal of the n-channel transistor. The base is energised such that, in normal operation, the pnp-transistor does not take up any current, but becomes conductive on reverse voltages.
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申请公布号 |
DE4342845(A1) |
申请公布日期 |
1995.06.14 |
申请号 |
DE19934342845 |
申请日期 |
1993.12.10 |
申请人 |
ELPRO AG BERLIN - INDUSTRIEELEKTRONIK UND ANLAGENBAU -, 12681 BERLIN, DE |
发明人 |
SAUPE, JOERG, DIPL.-ING., 16547 BIRKENWERDER, DE |
分类号 |
H03K17/0814;(IPC1-7):H03K17/16;H03K17/687 |
主分类号 |
H03K17/0814 |
代理机构 |
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代理人 |
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主权项 |
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