发明名称 Internal resistance reducing circuit for MOSFET half-bridge driver
摘要 The circuit reduces the internal resistance of inverting, complementary MOSFET half-bridge drivers on missing supply voltage. To the n-channel MOS transistor (T2) of the half-bridge driver is parallel-connected a pnp-transistor (T3), with the n-channel MOS transistor being of lower power. The connection is such that the pnp-transistor emitter is linked to the drain terminal (D), and its collector is coupled to the source terminal of the n-channel transistor. The base is energised such that, in normal operation, the pnp-transistor does not take up any current, but becomes conductive on reverse voltages.
申请公布号 DE4342845(A1) 申请公布日期 1995.06.14
申请号 DE19934342845 申请日期 1993.12.10
申请人 ELPRO AG BERLIN - INDUSTRIEELEKTRONIK UND ANLAGENBAU -, 12681 BERLIN, DE 发明人 SAUPE, JOERG, DIPL.-ING., 16547 BIRKENWERDER, DE
分类号 H03K17/0814;(IPC1-7):H03K17/16;H03K17/687 主分类号 H03K17/0814
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