发明名称 |
Dry etching process for semiconductor |
摘要 |
A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.
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申请公布号 |
US5423941(A) |
申请公布日期 |
1995.06.13 |
申请号 |
US19930152896 |
申请日期 |
1993.11.17 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
KOMURA, ATSUSHI;SAKANO, YOSHIKAZU;KONDO, KENJI;KON, KEIICHI;SANBEI, TETSUHIKO;MIURA, SHOJI |
分类号 |
H01L21/302;H01L21/3065;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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