W/WN METAL WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method forms metal wires on silicon wafer of semiconductor device. The wires have the double layers of tungsten and tungsten nitride. The method has the steps of depositing tungsten nitride film on silicon wafer by plasma chemical deposition or low pressure chemical deposition, depositing tungsten film on the tungsten nitride film, and then heating the films at high temperature. The wires with double layers prevents contamination from reaction of silicon and tungsten.