发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
A semiconductor integrated circuit includes one or more neuron MOS transistors on a substrate. The MOS transistor comprises a semiconductor region of one conductivity type, source and drain regions of opposite conductivity type disposed in this region, a floating gate disposed on an insulating film between the source and drain regions, and a plurality of input coupling electrodes making capacitive coupling with the floating gate through the insulating film, wherein the floating gate is connected to at least one switching device.
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申请公布号 |
WO9515581(A1) |
申请公布日期 |
1995.06.08 |
申请号 |
WO1994JP02001 |
申请日期 |
1994.11.29 |
申请人 |
OHMI, TADAHIRO;SHIBATA, TADASHI;KOTANI, KOJI |
发明人 |
OHMI, TADAHIRO;SHIBATA, TADASHI;KOTANI, KOJI |
分类号 |
G06F15/18;G06N3/063;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G06F15/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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