发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 A semiconductor integrated circuit includes one or more neuron MOS transistors on a substrate. The MOS transistor comprises a semiconductor region of one conductivity type, source and drain regions of opposite conductivity type disposed in this region, a floating gate disposed on an insulating film between the source and drain regions, and a plurality of input coupling electrodes making capacitive coupling with the floating gate through the insulating film, wherein the floating gate is connected to at least one switching device.
申请公布号 WO9515581(A1) 申请公布日期 1995.06.08
申请号 WO1994JP02001 申请日期 1994.11.29
申请人 OHMI, TADAHIRO;SHIBATA, TADASHI;KOTANI, KOJI 发明人 OHMI, TADAHIRO;SHIBATA, TADASHI;KOTANI, KOJI
分类号 G06F15/18;G06N3/063;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 主分类号 G06F15/18
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