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发明名称
Herstellungsverfahren eines Kanals in MOS-Halbleiteranordnung.
摘要
申请公布号
DE69105621(T2)
申请公布日期
1995.06.08
申请号
DE1991605621T
申请日期
1991.05.28
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
TOYOSHIMA, YOSHIAKI, C/O INTELLECTUAL PROPERTYDIV, MINATO-KU, TOKYO 105, JP;EGUCHI, TAMAO, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP
分类号
H01L21/225;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/78
主分类号
H01L21/225
代理机构
代理人
主权项
地址
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