Prodn. of a capacitor for semiconductor storage device

摘要

Prodn. of a capacitor comprises: (a) preparing a substrate (11); (b) forming an insulating intermediate layer (12) on the substrate; (c) removing a selected region of the intermediate layer so that a contact hole (13) is formed, through which a required surface region of the substrate, corresp. to a region formed as contact for the capacitor, is partially exposed; (c) burying W in the contact hole where a contact mark (14) is formed; (d) forming a storage electrode (15) on the intermediate layer so that the electrode is in electrical contact with the contact mark; (e) selectively etching the storage electrode up to a required depth so that at least two recesses (16) are formed in the electrode; and (f) forming a dielectric film (17) and a plate electrode (18) on the whole exposed surface and the storage electrode provided with recesses.