| 摘要 |
Method for the manufacture of a stacked-type capacitor consisting of alternating dielectric layers and conducting layers. The dielctric and conducting layers are deposited in succession. The dielectric layers are deposited by polymerization of elements derived from the dissociation, by remote nitrogen plasma, of an organo-siliceous or organo-germanium gas. The conducting layers are formed by deposition of conducting elements derived from the dissociation, by remote nitrogen plasma. of a precursor gas of the conducting elements.
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