Ferroelectric thin film and method of manufacturing the same.

摘要

This invention includes lead titanate containing La, and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. Accordingly, this invention provides a ferroelectric thin film which is imparted with a high c-axis orientation property while the film is formed. In addition, this thin film does not require a polarization process as with a bulk crystal. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate 9 disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater 10, exhausting a chamber 7, heating the substrate by the substrate heater 10, letting in sputtering gases Ar and O2 through a nozzle 14 into the chamber 7, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target 1 from a high frequency electric power source 8 to generate plasma, and a film is formed on the substrate 9. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb1-yLayTi1-y/4O3+x.MgO], where x=0.01 SIMILAR 0.10 and y=0.05 SIMILAR 0.25 can be manufactured.