| 摘要 |
The positive photoresist compsn. is composed of 60-85 wt.% of a novolak resin having average molecular wt. 2,000-20,000 and 15-40 wt.% of a naphthoquinone diazide sulfonic acid ester. The novolak resin is obtained by condensing 70-95 wt.% mixture of meta-cresol and para-cresol and 5-30 wt.% phenol deriv. of formula (I) [R1=R2=C1-6 alkyl, alkenyl or aryl with a formaldehyde. The phenol deriv. is pref. 2,6-dimethyl phenol, 2,4-dimethyl phenol, 3,5-dimethyl phenol, 2,3,5-trimethyl phenol or 2,3,6-trimethyl phenol. The photoresist compsn. is useful for the mfr. of semiconductor devices and electronic articles.
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