| 摘要 |
The solid-state image sensing device comprises an operating voltage (e.g. overflow drain voltage) generating circuit formed on the semiconductor substrate. The circuit includes plural resistors connected in series between two voltage supply terminals; plural fuses (109-114) connected in parallel to the resistors (R, 2R, 4R, 8R, 16R, 32R, 63 x 7R/8), respectively; and plural voltage selecting signal input terminals (101-108). In response to an external voltage selecting signal, since some parallel-connected fuses are melted away, a desired voltage lying within a predetermined range can be obtained at one of the series-connected resistors. Therefore, it is unnecessary to indicate the operating voltage on the device or to directly use the generated voltage for device activation. <IMAGE> |
