| 摘要 |
PURPOSE:To enable a thin film of even thickness to be formed rapidly and efficiently on a large area substrate at low temperature. CONSTITUTION:A plasma produced in the first vacuum chamber 1 is led into the second vacuum chamber 2 wherein a material gas comprising at least one kind of gas selected from the compounds of silicon and hydrogen as well as at least one kind of gas selected from a fluoride monosilane gas (SiHmFn: where m+n=4) is fed to the plasma stream 5 to be excited and decomposed for the formation of the title crystalline thin film. |
