Method for producing a thin film, and a semiconductor device having the thin film

摘要

Chalcopyrite compound semiconductor thin films represented by I-III-VI2-xVx or I-III-VI2-xVIIx, and semiconductor devices having a I-III-VI2/I-III-VI2-xVx or I-III-VI2/I-III-VI2-xVIIx chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.