发明名称 |
Low temperature etching in cold-wall CVD systems |
摘要 |
An improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and a low chamber pressure while maintaining a satisfactory etch rate by using at least one etchant gas selected from the group consisting of nitrogen trifluoride, chlorine trifluoride, sulfur hexafluoride, carbon tetrafluoride or the like and mixtures thereof.
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申请公布号 |
US5421957(A) |
申请公布日期 |
1995.06.06 |
申请号 |
US19930100582 |
申请日期 |
1993.07.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CARLSON, DAVID K.;HEY, H. PETER W.;HANN, JAMES C. |
分类号 |
H01L21/205;C23C16/44;H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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