| 摘要 |
PURPOSE:To prevent junction breakdown from occurring in a shallow diffusion layer when a static electricity pulse is applied to an external terminal which is connected to the shallow diffusion layer. CONSTITUTION:An n-type diffusion layer 102 is formed on the surface of a p-type semiconductor substrate 101 and an aluminum wiring 106 is in contact with the diffusion layer via a contact hole 107 opened at an interlayer insulation film 105. A contact n-type diffusion layer 104 which has a higher impurity concentration and a deeper junction depth is formed directly below the contact part of the aluminum wiring 106. A low-impurity concentration n well 103 is formed outside the contact n-type diffusion layer 104 so that the diffusion layer 104 can be enclosed. |
