发明名称 |
Method of forming single crystalline electrical isolated wells |
摘要 |
A quasi-dielectrically isolated (QDI) bipolar structure using epitaxial lateral overgrowth (ELO) uses a combination of dielectric isolation (DI) and junction isolation (JI), providing better isolation properties than JI, while providing better heat dissipation than DI. ELO silicon is grown out of a deep basin with oxide sidewalls for lateral dielectric isolation. The ELO silicon is grown at a low temperature and pressure in an RF heated pancake-type reactor. Fabricated transistors have gains, ideality factors, and leakage currents comparable to bulk devices. A main application for QDI is in power integrated circuits (PICs) where isolation of high power devices and low power logic is necessary.
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申请公布号 |
US5422299(A) |
申请公布日期 |
1995.06.06 |
申请号 |
US19930000802 |
申请日期 |
1993.01.04 |
申请人 |
PURDUE RESEARCH FOUNDATION |
发明人 |
NEUDECK, GEROLD W.;DUEY, STEPHEN J. |
分类号 |
H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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