MANUFACTURE OF THIN-FILM TRANSISTOR

摘要

PURPOSE:To raise the production yield of a liquid crystal display device by preventing the defect of a TFT substrate. CONSTITUTION:An anodic oxidation metal film 9 is formed by anodizing a gate electrode 2 formed on a substrate 1, and an SiN:H layer 7 is provided thereon by a low-temperature CVD method as an inter-line insulating layer between a drain 6, a source 5 and a gate electrode 2.