发明名称 |
Selective formation of porous silicon |
摘要 |
A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70% the porous silicon pattern emits visible light at room temperature.
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申请公布号 |
US5421958(A) |
申请公布日期 |
1995.06.06 |
申请号 |
US19930073019 |
申请日期 |
1993.06.07 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE UNITED STATES NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
FATHAUER, ROBERT W.;JONES, ERIC W. |
分类号 |
H01L21/306;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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