| 摘要 |
PURPOSE:To form a capacity insulating film based on a silicon nitride film which degrades little in film quality and is excellent in leak characteristic. CONSTITUTION:A polysilicon film is formed on a silicon oxide film 2 on a silicon substrate 1, and the film is doped with phosphorus. Then, a prescribed part in the polysilicon film is patterned. A lower-layer polysilicon film 3 is formed. After that, a silicon nitride film 4 is formed on the polysilicon film 3. A polysilicon film is formed on the whole face of the silicon nitride film 4. After that, the film is doped with phosphorus. Then, a prescribed part in the polysilicon film is patterned. An upper-layer polysilicon film 5 is formed. A silicon oxide film 6 is applied to the whole face. After that, in order to make the silicon oxide film 6 dense, a heat treatment is executed in an N2 atmosphere at a temperature of 1000 deg.C. After that, hydrogen ions 7 are implanted. |
