| 摘要 |
PURPOSE: To ensure sufficient charge storage capacity, even when the occupied area of a memory cell is decreased by successively forming a dielectric film and a plate electrode on the full surfaces of a first charge storage electrode pattern shaped like a plane and a second charge storage electrode pattern in a double cylinder structure. CONSTITUTION: This device is provided with a diffused region 6 for a drain or a source, a diffused region 6' for a source or a drain a gate oxide film 3 laminated in a cgabbek reguib between the diffused region 6 and 6', and a word line 4 which is a gate electrode. Moreover, an oxide film spacer 5 is formed at the sidewall of the word line 4. Moreover, this device is provided with a first charge storage electrode pattern 11A, connected electrically with the diffused region 6 formed at the upper part of a nitride film 8 and a second charge storage electrode pattern 17A in a double cylinder structure formed on the surface of the first electrode storage electrode pattern 11A. The first and second charge storage electrode patterns 11A and 17A are connected electrically, and a dielectric film 18 and a plate electrode 19 are successively formed on the exposed part. |
