| 摘要 |
<p>PURPOSE:To make large the supplementary capacitance furnished on a semiconductor device for a display element substrate CONSTITUTION:A semiconductor device for a display element substrate is configured with an insulative substrate 4, and thereon picture element electrodes 1 arranged in matrix form, switching elements 2 to drive respective picture element electrodes, and supplementary capacitances 3 corresponding to respective picture element electrodes 1 are provided in laminate. A middle-layer region consisting of a flattened layer 5 is interposed between the under-layer region where the switching elements 2 are formed and the over-layer region where the picture element electrodes 1 are formed. The supplementary capacitances 3 are formed in a trench 6 furnished in the flattened layer 5. The supplementary capacitance 3 has a laminate structure consisting of the first metal electrode film 7, dielectric substance film 8, and second metal electrode film 9.</p> |
