| 摘要 |
<p>PURPOSE:To prevent depletion due to the hydrogen treatment of a thin-film transistor integrated for formation in a semiconductor device for display element substrate use. CONSTITUTION:This is a semiconductor device for display element substrate use in which a thin-film transistor constituting a display part and a peripheral circuit part is integrated for formation on an insulating substrate. On the insulating substrate 1, a hydrogen containing film 6 acting as a supply source of hydrogen to a thin-film transistor and a hydrogen shielding film 7 for accelerating and controlling the supply of hydrogen are formed. The hydrogen shielding film 7 is selectively patterned in accordance with an individual thin-film transistor, and the hydrogenation of the thin-film transistor is controlled. For instance, the hydrogen shielding film 7 is provided against a P-channel type thin-film transistor, and the hydrogen shielding film 7 is not provided against an N- channel type thin-film transistor. Thereby, the hydrogenation speed of the N- channel type transistor is relatively retarded, so that the depleting thereof may be prevent.</p> |
