| 摘要 |
<p>PURPOSE:To provide an insulated-gate type transistor and its manufacture which make feasible the low resistance between a source and a drain wiring by preventing the sticking of an image due to a parasitic capacitance between a gate and a drain, thereby preventing the generation of a defect level due to plasma doping. CONSTITUTION:This insulated-gate transistor is provided with an insulating substrate 2, a gate 11 formed in the insulating substrate 2, a second insulating layer 27 formed on the gate 11 through a first insulating layer 24, a channel 31 of an amorphous silicon layer not containing impurities which is formed under second insulating layer, a pair of amorphous silicon layers 32 which contain impurities and is adjacent to the channel 31 and source-drain wirings 12, 23 formed on an amorphous silicon layer containing impurities.</p> |
