FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a method for fabricating a semiconductor device in which a metal compound film can be deposited on a semiconductor substrate without increasing the resistivity or deteriorating the heat resistance even in the form of a thin film. CONSTITUTION:The method for fabricating a semiconductor device comprises a step for depositing a transition metal film 6 on a semiconductor substrate 1, a step for depositing a carbon film 7 thereon, and a step for causing at least a part of the semiconductor substrate 1 to react on the transition metal 6 contiguous thereto through heat treatment thus depositing a compound film 8 of the compositional element of the semiconductor substrate and the transition metal.