| 摘要 |
<p>PURPOSE: To directly read the current of the integrated memory cells of a microcontroller by supplying a low voltage to the programming voltage supply line of a memory array, performing the write operation of the prescribed cell of the memory array and measuring the current flowing to the cell. CONSTITUTION: A node 19 is connected through a voltage supply line 16 and a switch 17 composed of an MOS transistor to a pin 18 supplied with a programming voltage Vpp. A programmable voltage source 30 and an ammeter or other current measuring element 31 are present at the outside of this microcontroller 1 and connected to the pin 18. By writing the read bit of a data cell or a reference cell in the cells 23 and 27 of a control register, selecting a prescribed pair of the cells by a word line and a data input bus, applying 1V to a programming pin 18 and issuing a write instruction (thus generating a high logic level in a write enable line W-EN and turning ON the switch 17), the cell is measured.</p> |
