发明名称 |
BOUNDARY ADHESION METHOD BETWEEN INSULATION MATERIALS |
摘要 |
PURPOSE: To improve the adhesive strength of an interface between layers of insulating materials during the manufacture of an integrated circuit which has a multilayered structure. CONSTITUTION: For a method of improving the adhesion state of an interface between the insulating material layers during the manufacture of a semiconductor device, a 1st insulating layer 1 is formed of an insulating material on a circuit structure 7 which is formed on a substrate 6 of a semiconductor substrate, then a 2nd insulating layer 3 of an insulating material is out over the 1st insulating layer 1, and a thin oxide layer 2 is formed in an adhered state between the 1st and 2nd insulating layers 1 and 3. This inserted oxide layer 2 functions as an adhesion layer between the two superimposed insulating layers 1 and 3.
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申请公布号 |
JPH07142730(A) |
申请公布日期 |
1995.06.02 |
申请号 |
JP19940139620 |
申请日期 |
1994.05.31 |
申请人 |
SGS THOMSON MICROELETTRONICA SPA |
发明人 |
MAURITSUIO BATSUKETSUTA;RAURA BATSUCHI;RUKA TSUANOTSUTEI |
分类号 |
H01L29/78;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L23/31;H01L23/532;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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