| 摘要 |
PURPOSE: To form metal-to-metal antifuse structure, for which the fluctuation of breakdown voltage is reduced by depositing antifuse dielectrics on a flat conductive material, in minimum dimension. CONSTITUTION: An antifuse stack 32 is formed by successively depositing a 1st metal layer 16, antifuse dielectric layer 20 and etch stop layer on devices 10-12 in this order. The etch stop layer is provided with an oxide layer 24 and an amorphous silicon layer 28, for example. An antifuse via 44 performs etching through an interlevel oxide layer 36 to the antifuse stack 32. Next, the exposed section of etch stop layer on the inner bottom of antifuse via 44 is removed. Finally, a 2nd metal layer 48 is deposited for filling the antifuse via 44, etching is performed for forming desired mutual connection and as a result, an antifuse 52 is provided. |
