| 摘要 |
PURPOSE: To manufacture a resonance-type tunnel device by forming a quantum well of silicon and a band gap which is larger than the silicon and providing a couple of tunnel barriers, formed of materials that can be epitaxially deposited on the silicon. CONSTITUTION: A silicon layer 12 is deposited epitaxially on a silicon substrate 10. Antimony impurities are doped in N<+> -type to the silicon layer 12, and then a CaF2 layer 14 is deposited epitaxially on the layer 12. Further, a silicon layer 16 is deposited epitaxially on the CaF2 layer 14 and antimony impurities are added in N<+> -type. Then a photoresist layer is added onto the silicon layer 16 and patterned to determine the region of the device. On this wafer, for example, an aluminum layer is deposited, and the photoresist is removed to leave an aluminum contact body 18. Then the remaining silicon layer 12 is removed, and another photoresist mask is used to form a 2nd device contact body 20. |
