发明名称 METHOD FOR DEVELOPING PHOTORESIST
摘要 PURPOSE:To prevent adherence of bubble in developer to a surface of photoresist and to form an excellent pattern for a hydrophobic photoresist by supplying pure water to an exposed surface of the photoresist to form a water thin film, supplying the developer to the film to form a developer layer. CONSTITUTION:Pure water is dropped on an exposed surface of a positive photoresist 1 of a wafer, and a board 2 is rotated to form a water film 5 having a thickness of 50-200nm. Then developer 3 is supplied, photoresist 1a of an exposed part is dissolved in the developer, rinsed with pure water, and dried by spinning to form a resist pattern. A water film 5 may be formed on the surface of the resist 1 by atomizing water in a foggy state by spraying or ultrasonic wave. Thus, adherence of bubble in the developer to the surface of the resist can be prevented due to enhancement of wettability of the surface of the photoresist with the developer.
申请公布号 JPH07142344(A) 申请公布日期 1995.06.02
申请号 JP19930282859 申请日期 1993.11.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAGI TOSHIO
分类号 G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/30
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