| 摘要 |
PURPOSE:To make it possible to control the orientation of a ferroelectric thin film and to control the size of residual dielectric polarization by forming the compound of BaTiO3 on a platinum thin film, and receiving the crystal orientation of the platinum thin film in an orientation control layer in an intact mode. CONSTITUTION:An orientation control layer 16 is formed of one or two or more kinds of the compounds selected among the group of the compounds of BaTiO3, SrTiO3, BaO, SrO, CeO2 and MgO on a platinum thin film 14. Then, the crystal orientation of the platimum thin film 14 is received in the orientation control layer 16 in an intact mode, and the layer 16 is formed. Furthermore, a PZT layer or a PLZT layer 18 is formed on the orientation control layer 16. Therefore, the orientation of the orientation control layer 16 can be displayed in an intact mode in the crystal orientation of the PZT layer or the PLZT layer 18. Therefore, the control of the crystal orientation of the PZT layer or the PLZT layer becomes easy. Thus, the size of residual dielectric polarization can be controlled. |
