发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To provide an equalizer circuit and a precharge circuit capable of cutting down the equalizing time and the precharging time without decreasing the yield at all. CONSTITUTION:Mutually adjacent specific pair of word lines are assumed as dummy word lines DWL1, DWL2 while accumulated nodes N1, N2 are short- circuited with each other between a pair of dummy memory cells 11n, 12n connected to said pair of dummy word lines DWLI, DWL2 furthermore, the accumulated nodes N1, N2 in respective pair of memory cells 111 121 are short-circuited with cell plates 25 so as to constitute an equalizing circuit and a precharging circuit using the same memory cell as an equalizing and precharging transistor.
申请公布号 JPH07142606(A) 申请公布日期 1995.06.02
申请号 JP19930311156 申请日期 1993.11.16
申请人 SONY CORP 发明人 FURUNO KATSUNAO
分类号 G11C11/409;G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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