| 摘要 |
PURPOSE:To provide a rectifier element of a toward voltage drop much lower than a conventional one, by connecting a field effect transistor in parallel between a first electrode forming a schottoky barrier with a surface of a first conductivity type layer, and a second electrode to be connected to the other surface of the first conductivity type layer with a low resistance. CONSTITUTION:A MOSFET is connected in parallel through the medium of an N<+> layer 8 to a Schottky barrier rectifier element existing between an anode electrode 71 and a cathode electrode 72. As a result of this, the MOSFET turns on and current flows through the MOSFET, the n<+> layer, and a p<+> layer 1, if a positive voltage is applied to the gate terminal when a positive voltage is applied to the anode terminal A and a negative voltage to the cathode terminal K. That is because the current path is considered to be composed of all resistors, and because its resistance is lower than a path via a Schottky barrier formed between the anode electrode 71 and an n<-> layer 2. Forward characteristics at this time are improved compared with time when no voltage is applied to the gate terminal. |
