发明名称 |
RESIST RINSING SOLUTION AND RESIST DEVELOPING METHOD |
摘要 |
PURPOSE:To provide a resist rinsing solution capable of improving resolution by solving the problem of pattern deformation caused by too large surface tension of pure water used as a rinsing solution in the developing process of the resist and to provide a resist developing method using the rinsing solution. CONSTITUTION:In the resist development of a resist material containing a novolak resin and a hydroxypolystyrene resin as base materials, the resist rinsing solution having 30-50dyn/cm surface tension is used for solving the problem of pattern deformation caused by a resist rinsing solution used for resist developing. |
申请公布号 |
JPH07140674(A) |
申请公布日期 |
1995.06.02 |
申请号 |
JP19930146137 |
申请日期 |
1993.06.17 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
MIYOSHI KAZUNARI;DEGUCHI KIMIKICHI |
分类号 |
G03F7/32;H01L21/027;H01L21/30;(IPC1-7):G03F7/32 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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