发明名称 RESIST RINSING SOLUTION AND RESIST DEVELOPING METHOD
摘要 PURPOSE:To provide a resist rinsing solution capable of improving resolution by solving the problem of pattern deformation caused by too large surface tension of pure water used as a rinsing solution in the developing process of the resist and to provide a resist developing method using the rinsing solution. CONSTITUTION:In the resist development of a resist material containing a novolak resin and a hydroxypolystyrene resin as base materials, the resist rinsing solution having 30-50dyn/cm surface tension is used for solving the problem of pattern deformation caused by a resist rinsing solution used for resist developing.
申请公布号 JPH07140674(A) 申请公布日期 1995.06.02
申请号 JP19930146137 申请日期 1993.06.17
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MIYOSHI KAZUNARI;DEGUCHI KIMIKICHI
分类号 G03F7/32;H01L21/027;H01L21/30;(IPC1-7):G03F7/32 主分类号 G03F7/32
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