| 摘要 |
PURPOSE:To avoid a stringer when, e.g. a polycrystalline (polysilicon) electrode film is formed in relation to the formation of said film on a stepped substrate for a semiconductor device. CONSTITUTION:For example, a polycrystalline silicon film 13 is deposited on a substrate 12 having recesses and after leading impurities thereinto, SOG films 14 containing the impurities are selectively deposited on the polycrystalline silicon silm 13 in the recesses of the substrate 12 to be heat-treated later so that the impurity concentration in the polycrystalline silicon film in the recesses may be increased 15 (for lowering resistance) to be etched away later for the formation of specific polycrystalline patterns 17. In such a constitution, the polycrystalline silicon film 13 in the recesses contains the impurities in high concentration, the etching rate thereof is so high that a stringer production may be avoided. |
