| 摘要 |
PURPOSE:To shorten the fabrication process without increasing the collector resistance of a bipolar transistor by filling contact the holes reaching the collector diffusion region, the base lead-out region, and the emitter region, respectively, with the same metal or metal silicide. CONSTITUTION:In a bipolar transistor comprising a collector 4 of one conductivity type, a base 7 of opposite conductivity type, and an emitter 12 of one conductivity type provided on a semiconductor substrate 1, a contact hole 101 of emitter electrode layer reaching the emitter region 12 is filled with an emitter electrode layer 11, i.e., polysilicon. A collector trench 100 for forming a collector diffusion layer 10 is filled with interlayer insulating layers 13, 14 and contact holes 102c, 102b, 102e reaching the collector diffusion region 10, base lead-out region 8 and emitter region 12, respectively, are filled with the same metal or metal silicide 16. The contact hole 102c reaching the collector diffusion region 10 is made deeper than the main surface of the semiconductor substrate 1.
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