发明名称 MOSFET POWER AMPLIFIER
摘要 <p>PURPOSE:To reduce the invalid current of a power output stage, to reduce cross-over distortion and to efficiently drive a MOSFET power amplifier by providing offset stages before and behind a power output stage and providing amplifier stages amplifying input signals before and behind the offset stages. CONSTITUTION:The positive side offset (level shift) stage 6 for PMOSFET Q1 and the negative side offset (level shift) stage 7 for NMOSFET Q2 are provided for the gate voltage bias of PMOSFET Q1 and NMOSFET Q2 in the power output stage 5. A positive side differential amplifier stage 8 is provided in the prestage of the positive side offset stage 6 and a negative side differential amplifier stage 9 in the prestage of the negative side offset stage 7. Voltage inputted to an input terminal 1 is impressed on the inverted input means of the differential amplifying stages 8 and 9. In such a case, the non- inverted input-sides of the differential amplifying stages 8 and 9 are connected to an output terminal 2, and they function as a voltage follower.</p>
申请公布号 JPH07142940(A) 申请公布日期 1995.06.02
申请号 JP19930309685 申请日期 1993.11.17
申请人 NEW JAPAN RADIO CO LTD 发明人 AKITA SHINICHI;IKEDA TAISUKE
分类号 H03K17/16;H03F3/30;H03F3/34;H03F3/345;H03F3/45;H03K17/687;(IPC1-7):H03F3/30 主分类号 H03K17/16
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