| 摘要 |
<p>PURPOSE:To resolve the deterioration of the film quality and the reduction of the film forming speed by generating uniform plasma on the surface of a relatively large work. CONSTITUTION:This microwave plasma device is provided with a bell jar 12 fed with reaction gas, a cylindrical applicator 10 resonated in the low-order mode, rectangular wave guides 11A, 11B connected to insertion ports provided on the cylinder side face of the cylindrical applicator 10, and a substrate base 14 to be arranged with the machining face of a substrate 15 in the horizontal direction near the insertion ports. The plasma of the reaction gas is generated by the microwave resonance in the low-order mode such as TM01. A uniform film can be formed on a large work having the diameter of about 3 in. When the microwave is 2450MHz, the inner diameter of the applicator 10 is set to 120-140mm, the width of the microwave insertion ports is set to 120-140mm, the height is set to 5-40mm, and the resonance axial length is set to 80-100mm.</p> |
