| 摘要 |
PURPOSE:To provide a semiconductor memory smaller in area by miniaturizing the transistors comprising a memory cell. CONSTITUTION:This semiconductor memory is composed of trenches 22 formed on a p type semiconductor substrate 21, the first N<+> regions 23 formed on the surface of the semiconductor substrate 21, the second N<+> regions 24 buried- formed on the bottom surface of the trenches 22, an oxide film 25 formed on the surface of the semiconductor substrate 21 and the surface of the trenches 22, gate electrodes 26 formed on the oxide film 25 on the sides of the trenches 22 and word lines 27 formed on the semiconductor substrate 21 so as to be orthogonal to the trenches 22 and conductive to the gate electrodes 26 at the intersections with the trenches 22. |
