发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a desired inductance without making long a grounding conductor by a method wherein a conductive film for grounding provided on the surface of an insulating plate adjacent to a semiconductor substrate is utilized as a series feedback inductance. CONSTITUTION:Conductive layers 23 for grounding, a conductive layer 24 for a drain and a conductive layer 25 for a gate are continuously formed through a plated gold layer on the surface of an insulating substrate 21 from the surface of the substrate 21 to the rear of the substrate 21 along the outside of an open hole 22. The layers 23 are extended also on the periphery of the open hole 22 in the rear of the substrate 21, the layers 23 are respectively provided along the opposed two short sides 22a of the open hole 22 and the layers 24 and 25 are respectively provided along the other long sides 22b. A grounding lead 31 is brazed to the layers 23 on the back side of the substrate 21 in such a way as to stop the open hole 22. Accordingly, as the most part of a series feedback inductance can be attained by a conductive film for grounding, a desired inductance can be obtained without making long a grounding conductor.
申请公布号 JPH07142626(A) 申请公布日期 1995.06.02
申请号 JP19930306050 申请日期 1993.11.12
申请人 JAPAN ENERGY CORP 发明人 NAGASHIMA TAKASHI
分类号 H01L23/04;H01L21/338;H01L23/02;H01L29/812 主分类号 H01L23/04
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