| 摘要 |
PURPOSE:To reduce a threshold voltage by forming respective gate electrodes of P(N) channel MOS transistors by P(N)-type impurity-doped poly-crystal Si layers. CONSTITUTION:The gate electrode of a N channel MOS transistor, namely, poly- crystal Si layer 11 is formed with N-type impurity-doped poly-crystal Si, and the other P channel MOS transistor is formed similarly. Both poly-crystal Si layers 11 and 12 are extended near channel stopper region 10. In this constitution, since respective gates are constituted by impurity-doped poly-crystal Si layers 11 and 12, the threshold voltage can be reduced. Meanwhile, this constitution is advantageous to improve an integration degree because electrodes 14S, 14D 15S and 15D which are taken out from souce and drain regions are formed by conductive poly-crystal Si layers. |
