发明名称 |
Verfahren zum Herstellen einer Halbleitervorrichtung. |
摘要 |
Electrical connection is provided to a device region (3,4) bounded by an insulating region (12a,12b,9) and adjacent one major surface (1a) of a semiconductor body (1) by applying a flowable organic material to form an organic layer (20) on the one major surface (1a), defining a masking layer (30) over the organic layer (20), etching the organic layer (20) selectively with respect to the underlying device and insulating regions through a window (31) in the masking layer (30) to form an opening (21) exposing a contact area (11) of the device region (3,4) and depositing electrically conductive material, for example tungsten, to form a conductive pillar (40) within the opening (21) in contact with the contact area (11). The organic layer (20) is then removed so as to expose the conductive pillar (40), a layer 50 of insulating material is provided over the pillar, the insulating layer is etched to expose a top surface of the pillar and electrically conductive material deposited to contact the pillar (40). |
申请公布号 |
DE69018884(D1) |
申请公布日期 |
1995.06.01 |
申请号 |
DE1990618884 |
申请日期 |
1990.06.21 |
申请人 |
PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
发明人 |
VERHAAR, ROBERTUS DOMINICUS JOSEPH, NL-5656 AA EINDHOVEN, NL;DE BRUIN, LEENDERT, NL-5656 AA EINDHOVEN, NL |
分类号 |
H01L21/3205;H01L21/28;H01L21/60;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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