| 摘要 |
An integrated circuit for the programming of a memory cell in a non-volatile memory register, said memory cell comprising at least one programmable non-volatile memory element (TF;TF0,TF1) having a cotrol electrode and a supply electrode and being suitable to store one bit of information and a load circuit (LC;T0-T3) associated to said memory element (TF;TF0,TF1) to read the information stored therein, comprises switching means (TS;T4,T5), connected in series between the supply electrode of said at least one memory element (TF;TF0,TF1) and a respective data line (A;A,AN) carrying a datum to be programmed into said memory element (TF;TF0,TF1); the switching means are controlled by a signal (7) which determines the switching means (TS;T4,T5) to electrically connect the memory element (TF;TF0,TF1) to the data line (A;A,AN) when the memory cell of the non-volatile memory register is to be programmed. <IMAGE> |
