| 摘要 |
1,179,452. Magnetic storage devices. SIEMENS A.G. 29 March, 1967 [31 March, 1966], No. 14193/67. Addition to 1,100,703. Headings H1H and H1T. The magnetic storage element comprising a stack of thin film magnetic layers separated by the thinner intermediate layers of non- magnetic material as described in Specification 1,100,703, is modified by using magnetic layers having a preferred axis of magnetization and intermediate insulating layers of non-uniform thickness. The intermediate layers may be formed of silicon monoxide or silicon dioxide and be between 10 Š and 20 Š thick. |
