| 摘要 |
<p>In a method of making a semiconductor apparatus which is capable of controlling fluctuations of the effective length of the conduction area which occurs at making, and a semiconductor apparatus using this method, the edge of the first and/or second electric conduction film is formed by self adjustment to the trench, and the position of the edge of impurity diffusion zone is formed by self adjustment to the edge of electric conduction film. Thus, the fluctuation of effective length of the conduction area can be avoided. Resultingly, a highly efficient semiconductor apparatus can be provided. <IMAGE> <IMAGE> <IMAGE></p> |
