Process for fabrication of a silicon nitride layer as an anti-reflection layer in photolithography processes during the manufacture of high density semiconductor circuits.,申请号EP19890101134-传众专利搜索

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发明名称	Process for fabrication of a silicon nitride layer as an anti-reflection layer in photolithography processes during the manufacture of high density semiconductor circuits.
摘要
申请公布号	EP0379604(B1)	申请公布日期	1995.05.31
申请号	EP19890101134	申请日期	1989.01.23
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	JOSWIG, HELLMUT, DR.;KUECHER, PETER, DR.
分类号	G03F7/09;H01L21/027;H01L21/318;(IPC1-7):G03F7/09;H01L21/033;H01L21/311	主分类号	G03F7/09
代理机构		代理人
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